Kingston Memory KVR1333D3N9/4G 4GB DDR3-1333 MHz

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Kingston Memory KVR1333D3N9/4G 4GB DDR3-1333 MHz

Description

DDR3-1333 CL9 SDRAM (Synchronous DRAM), 2Rx8 memory module, based on sixteen 256M x 8-bit DDR3-1333 FBGA components. The SPD is programmed to JEDEC standard latency DDR3-1333 timing of 9-9-9 at 1.5V. This 240-pin DIMM uses gold contact fingers. The electrical and mechanical specifications are as follows:

This document describes ValueRAM's 512M x 64-bit (4GB)

Features

• PCB: Height 0.740” (18.75mm), double sided component

• JEDEC standard 1.5V (1.425V ~1.575V) Power Supply

• VDDQ = 1.5V (1.425V ~ 1.575V)

• 667MHz fCK for 1333Mb/sec/pin

• 8 independent internal bank

• Programmable CAS Latency: 9, 8, 7, 6

• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock

• Programmable CAS Write Latency(CWL) = 7 (DDR3-1333)

• 8-bit pre-fetch

• Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]

• Bi-directional Differential Data Strobe

• Internal (self) calibration: Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)

• On Die Termination using ODT pin

• Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C

• Asynchronous Reset

Specifications

CL(IDD) 9 cycles

Row Cycle Time (tRCmin) 49.5ns (min.)

Refresh to Active/Refresh 160ns (min.)

Command Time (tRFCmin)

Row Active Time (tRASmin) 36ns (min.)

Maximum Operating Power 2.400 W*UL Rating 94 V - 0